Energy Dissipation Pathways in Few-Layer MoS2 Nanoelectromechanical Systems
نویسندگان
چکیده
منابع مشابه
Phonons in single-layer and few-layer MoS2 and WS2
We report ab initio calculations of the phonon dispersion relations of the single-layer and bulk dichalcogenides MoS2 and WS2. We explore in detail the behavior of the Raman-active modes A1g and E1 2g as a function of the number of layers. In agreement with recent Raman spectroscopy measurements [C. Lee et al., ACS Nano 4, 2695 (2010)], we find that the A1g mode increases in frequency with an i...
متن کاملNonlinear intrinsic dissipation in single layer MoS2 resonators
Using dissipationmodels based on Akhiezer theory, we analyze themicroscopic origin of nonlinearity in intrinsic loss of a single layerMoS2.We study the intrinsic dissipation of single layerMoS2 under axial and flexuralmode of deformation using molecular dynamics (MD) simulation. We compare the amplitude scaling of intrinsic dissipation for both the cases with our proposed model. In the axial de...
متن کاملUltrafast carrier thermalization and cooling dynamics in few-layer MoS2.
Femtosecond optical pump-probe spectroscopy with 10 fs visible pulses is employed to elucidate the ultrafast carrier dynamics of few-layer MoS2. A nonthermal carrier distribution is observed immediately following the photoexcitation of the A and B excitonic transitions by the ultrashort, broadband laser pulse. Carrier thermalization occurs within 20 fs and proceeds via both carrier-carrier and ...
متن کاملDissipation and fluctuations in nanoelectromechanical systems based on carbon nanotubes.
The tribological characteristics of nanotube-based nanoelectromechanical systems (NEMS) exemplified by a gigahertz oscillator are studied. Various factors that influence the tribological properties of nanotube-based NEMS are quantitatively analyzed with the use of molecular dynamics calculations of the quality factor (Q-factor) of the gigahertz oscillator. We demonstrate that commensurability o...
متن کاملEpitaxial growth of few-layer MoS2(0001) on FeS2{100}.
Physical vapour deposition of Mo on an FeS2{100} surface was performed at 170 K. Near-epitaxial growth of MoS2(0001) overlayers of the order of 1 nm thickness was observed when the Mo-covered substrate was subsequently heated to 600 K.
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Scientific Reports
سال: 2017
ISSN: 2045-2322
DOI: 10.1038/s41598-017-05730-1